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SBC848BLT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-SBC848BLT1G
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 5225
- Description: SBC848BLT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 4 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| Series | Automotive, AEC-Q101 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 300mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 30V |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA 5V |
| Current - Collector Cutoff (Max) | 15nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Collector Emitter Breakdown Voltage | 30V |
| Max Frequency | 100MHz |
| Transition Frequency | 100MHz |
| Collector Emitter Saturation Voltage | 600mV |
| Frequency - Transition | 100MHz |
| Collector Base Voltage (VCBO) | 30V |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 1.01mm |
| Length | 3.04mm |
| Width | 1.4mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
SBC848BLT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 2mA 5V.The collector emitter saturation voltage is 600mV, which allows for maximum design flexibility.A VCE saturation (Max) of 600mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).An emitter's base voltage can be kept at 5V to gain high efficiency.As you can see, the part has a transition frequency of 100MHz.Collector current can be as low as 100mA volts at its maximum.
SBC848BLT1G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
SBC848BLT1G Applications
There are a lot of ON Semiconductor SBC848BLT1G applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
