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S2SC4617G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-S2SC4617G
- Package: SC-75, SOT-416
- Datasheet:
- Stock: 1093
- Description: S2SC4617G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 week ago) |
| Mounting Type | Surface Mount |
| Package / Case | SC-75, SOT-416 |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2014 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 125mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Frequency | 180MHz |
| Base Part Number | 2SC4617 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 125mW |
| Transistor Application | AMPLIFIER |
| Halogen Free | Halogen Free |
| Gain Bandwidth Product | 180MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 50V |
| Max Collector Current | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA 6V |
| Current - Collector Cutoff (Max) | 500nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 60mA |
| Collector Emitter Breakdown Voltage | 50V |
| Transition Frequency | 180MHz |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Base Voltage (VCBO) | 50V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 120 |
| Continuous Collector Current | 100mA |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
S2SC4617G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 1mA 6V.This design offers maximum flexibility with a collector emitter saturation voltage of 400mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 60mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 100mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 180MHz.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
S2SC4617G Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 60mA
the emitter base voltage is kept at 5V
a transition frequency of 180MHz
S2SC4617G Applications
There are a lot of ON Semiconductor S2SC4617G applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
