QS8K51TR

MOSFET 2N-CH 30V 2A TSMT8


  • Manufacturer: ROHM Semiconductor
  • NO: 687-QS8K51TR
  • Package: 8-SMD, Flat Lead
  • Datasheet: pdf
  • Stock: 1907
  • Description: MOSFET 2N-CH 30V 2A TSMT8(Kg)

Quantity:


  • Delivery: Delivery
  • Payment: payment

In Stock

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Means of Payment

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RFQ (Request for Quotations)

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Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Number of Pins 8
Packaging Tape & Reel (TR)
Published 2016
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 1.5W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number *K51
Number of Elements 2
Number of Channels 2
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 10 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rise Time 10ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 2A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 2A
Pulsed Drain Current-Max (IDM) 6A
DS Breakdown Voltage-Min 100V
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Resistance 240mOhm
RoHS Status ROHS3 Compliant
Lead Free Lead Free

In Stock

Please send RFQ , we will respond immediately.