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ContactQS5K2TR
MOSFET 2N-CH 30V 2A TSMT5
- Manufacturer: ROHM Semiconductor
- NO: 687-QS5K2TR
- Package: SOT-23-5 Thin, TSOT-23-5
- Datasheet:
- Stock: 5453
- Description: MOSFET 2N-CH 30V 2A TSMT5(Kg)
- Delivery:
- Payment:
In Stock
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Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 20 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-5 Thin, TSOT-23-5 |
| Number of Pins | 5 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Resistance | 100MOhm |
| Terminal Finish | TIN SILVER COPPER |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 30V |
| Max Power Dissipation | 1.25W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 2A |
| Time@Peak Reflow Temperature-Max (s) | 10 |
| Base Part Number | *K2 |
| Pin Count | 5 |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.25W |
| Turn On Delay Time | 8 ns |
| FET Type | 2 N-Channel (Dual) Common Source |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 100m Ω @ 2A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 175pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 3.9nC @ 4.5V |
| Rise Time | 10ns |
| Fall Time (Typ) | 10 ns |
| Turn-Off Delay Time | 21 ns |
| Continuous Drain Current (ID) | 2A |
| Threshold Voltage | 1.5V |
| Gate to Source Voltage (Vgs) | 12V |
| Drain Current-Max (Abs) (ID) | 2A |
| Drain to Source Breakdown Voltage | 30V |
| Pulsed Drain Current-Max (IDM) | 8A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 1.5 V |
| Height | 850μm |
| Length | 2.9mm |
| Width | 1.6mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
