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PZTA42T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-PZTA42T1G
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 8944
- Description: PZTA42T1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Surface Mount | YES |
| Number of Pins | 4 |
| Weight | 4.535924g |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 300V |
| Max Power Dissipation | 1.5W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 500mA |
| Frequency | 50MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | PZTA42 |
| Pin Count | 4 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1.5W |
| Case Connection | COLLECTOR |
| Gain Bandwidth Product | 50MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 300V |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 30mA 10V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 2mA, 20mA |
| Collector Emitter Breakdown Voltage | 300V |
| Transition Frequency | 50MHz |
| Collector Emitter Saturation Voltage | 500mV |
| Max Breakdown Voltage | 300V |
| Collector Base Voltage (VCBO) | 300V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 25 |
| Height | 1.57mm |
| Length | 6.5mm |
| Width | 3.5mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
PZTA42T1G BJT Description
The PZTA42T1G high-voltage NPN Bipolar Transistor is designed for use as a general-purpose amplifier and in switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. It has a Collector-Emitter voltage of up to 300 V and dissipates 1.5W power at 25°C. Plus, it has a very broad storage temperature. The maximum current it can hold to its Collector is 500 mA (DC).
PZTA42T1G BJT Features
AEC?Q101 Qualified
Pb?Free
Complement to PZTA92T1G
Halogen Free/BFR Free
RoHS Compliant
PPAP Capable
PZTA42T1G BJT Applications
Thermal Solutions
General Power Applications
Low Power Amplifiers
Push-pull topologies
Tone control
Low noise stages in audio equipment
General Purpose Switching
