PZTA42H6327XTSA1

PZTA42H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • NO: 376-PZTA42H6327XTSA1
  • Package: TO-261-4, TO-261AA
  • Datasheet: pdf
  • Stock: 1485
  • Description: PZTA42H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 1.5W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number PZTA42
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 300V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 30mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage 300V
Max Frequency 70MHz
Transition Frequency 70MHz
Collector Emitter Saturation Voltage 500mV
Frequency - Transition 70MHz
Collector Base Voltage (VCBO) 300V
Emitter Base Voltage (VEBO) 6V
hFE Min 25
Height 1.6mm
Length 6.5mm
Width 3.5mm
RoHS Status ROHS3 Compliant

PZTA42H6327XTSA1 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 30mA 10V.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 2mA, 20mA.An emitter's base voltage can be kept at 6V to gain high efficiency.In this part, there is a transition frequency of 70MHz.A maximum collector current of 500mA volts can be achieved.

PZTA42H6327XTSA1 Features


the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
a transition frequency of 70MHz

PZTA42H6327XTSA1 Applications


There are a lot of Infineon Technologies PZTA42H6327XTSA1 applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

In Stock

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