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PZTA29 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-PZTA29
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 8435
- Description: PZTA29 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 5 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Weight | 188mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 100V |
| Max Power Dissipation | 1W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 800mA |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | PZTA29 |
| JESD-30 Code | R-PDSO-G4 |
| Number of Elements | 1 |
| Polarity | NPN |
| Configuration | SINGLE |
| Power Dissipation | 1W |
| Case Connection | COLLECTOR |
| Transistor Type | NPN - Darlington |
| Collector Emitter Voltage (VCEO) | 100V |
| Max Collector Current | 800mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10000 @ 100mA 5V |
| Current - Collector Cutoff (Max) | 50nA |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 100μA, 100mA |
| Collector Emitter Breakdown Voltage | 100V |
| Transition Frequency | 125MHz |
| Collector Emitter Saturation Voltage | 1.2V |
| Max Breakdown Voltage | 100V |
| Frequency - Transition | 125MHz |
| Collector Base Voltage (VCBO) | 100V |
| Emitter Base Voltage (VEBO) | 12V |
| hFE Min | 10000 |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
PZTA29 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 10000 @ 100mA 5V.As it features a collector emitter saturation voltage of 1.2V, it allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 100μA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 12V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 800mA for this device.As a result, the part has a transition frequency of 125MHz.A breakdown input voltage of 100V volts can be used.When collector current reaches its maximum, it can reach 800mA volts.
PZTA29 Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 12V
the current rating of this device is 800mA
a transition frequency of 125MHz
PZTA29 Applications
There are a lot of ON Semiconductor PZTA29 applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
