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PN4917 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-PN4917
- Package: TO-226-3, TO-92-3 (TO-226AA)
- Datasheet:
- Stock: 8681
- Description: PN4917 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins | 3 |
| Weight | 201mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 1997 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -30V |
| Max Power Dissipation | 625mW |
| Terminal Position | BOTTOM |
| Terminal Form | WIRE |
| Reach Compliance Code | unknown |
| Current Rating | -50mA |
| Base Part Number | PN4917 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 625mW |
| Gain Bandwidth Product | 450MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 30V |
| Max Collector Current | 200mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 10mA 1V |
| Current - Collector Cutoff (Max) | 25nA |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 50mA |
| Collector Emitter Breakdown Voltage | 30V |
| Transition Frequency | 450MHz |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Base Voltage (VCBO) | 30V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 150 |
| Collector-Base Capacitance-Max | 4.5pF |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
PN4917 Overview
This device has a DC current gain of 150 @ 10mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 300mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation (Max) of 300mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -50mA.A transition frequency of 450MHz is present in the part.Maximum collector currents can be below 200mA volts.
PN4917 Features
the DC current gain for this device is 150 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -50mA
a transition frequency of 450MHz
PN4917 Applications
There are a lot of ON Semiconductor PN4917 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
