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PN2907ATA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-PN2907ATA
- Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet:
- Stock: 1001
- Description: PN2907ATA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Number of Pins | 3 |
| Weight | 240mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Box (TB) |
| Published | 2000 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -60V |
| Max Power Dissipation | 625mW |
| Terminal Position | BOTTOM |
| Current Rating | -800mA |
| Frequency | 200MHz |
| Base Part Number | PN2907A |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 625mW |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 200MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 60V |
| Max Collector Current | 800mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA 10V |
| Current - Collector Cutoff (Max) | 20nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 60V |
| Transition Frequency | 200MHz |
| Collector Emitter Saturation Voltage | 1.6V |
| Max Breakdown Voltage | 60V |
| Collector Base Voltage (VCBO) | -60V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 100 |
| Turn On Time-Max (ton) | 45ns |
| Height | 5.33mm |
| Length | 5.2mm |
| Width | 4.19mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
PN2907ATA Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.6V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.6V @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -800mA for this device.As you can see, the part has a transition frequency of 200MHz.This device can take an input voltage of 60V volts before it breaks down.When collector current reaches its maximum, it can reach 800mA volts.
PN2907ATA Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -800mA
a transition frequency of 200MHz
PN2907ATA Applications
There are a lot of ON Semiconductor PN2907ATA applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
