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PN100A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-PN100A
- Package: TO-226-3, TO-92-3 (TO-226AA)
- Datasheet:
- Stock: 402
- Description: PN100A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Frequency | 250MHz |
| Base Part Number | PN100 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 625mW |
| Transistor Application | AMPLIFIER |
| Gain Bandwidth Product | 250MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 45V |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 10mA 1V |
| Current - Collector Cutoff (Max) | 50nA |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 20mA, 200mA |
| Collector Emitter Breakdown Voltage | 45V |
| Transition Frequency | 250MHz |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Base Voltage (VCBO) | 75V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 300 |
| VCEsat-Max | 0.2 V |
| Collector-Base Capacitance-Max | 4.5pF |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 15 Weeks |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 2 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Number of Pins | 3 |
| Weight | 201mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2008 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 45V |
| Max Power Dissipation | 625mW |
| Terminal Position | BOTTOM |
| Current Rating | 500mA |
PN100A Overview
In this device, the DC current gain is 300 @ 10mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is 400mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 20mA, 200mA.Emitter base voltages of 6V can achieve high levels of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.Parts of this part have transition frequencies of 250MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
PN100A Features
the DC current gain for this device is 300 @ 10mA 1V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 20mA, 200mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 250MHz
PN100A Applications
There are a lot of ON Semiconductor PN100A applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
