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PMBT4403,235 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi
- Manufacturer: Nexperia USA Inc.
- NO: 554-PMBT4403,235
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 8511
- Description: PMBT4403,235 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 4 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2015 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Power Dissipation | 250mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Frequency | 200MHz |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | PMBT4403 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 250mW |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 200MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 40V |
| Max Collector Current | 600mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA 2V |
| Current - Collector Cutoff (Max) | 50nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 40V |
| Transition Frequency | 200MHz |
| Max Breakdown Voltage | 40V |
| Collector Base Voltage (VCBO) | 40V |
| Emitter Base Voltage (VEBO) | 5V |
| Turn On Time-Max (ton) | 40ns |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
PMBT4403,235 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA 2V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 750mV @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.In this part, there is a transition frequency of 200MHz.A breakdown input voltage of 40V volts can be used.In extreme cases, the collector current can be as low as 600mA volts.
PMBT4403,235 Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz
PMBT4403,235 Applications
There are a lot of Nexperia USA Inc. PMBT4403,235 applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
