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ContactPHE13007,127
PHE13007,127 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available at Feilidi
- Manufacturer: WeEn Semiconductors
- NO: 887-PHE13007,127
- Package: TO-220-3
- Datasheet:
- Stock: 8698
- Description: PHE13007,127 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Position | SINGLE |
| Base Part Number | PHE13007 |
| Reference Standard | IEC-134 |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Case Connection | COLLECTOR |
| Power - Max | 80W |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 2A 5V |
| Current - Collector Cutoff (Max) | 200μA |
| JEDEC-95 Code | TO-220AB |
| Vce Saturation (Max) @ Ib, Ic | 350mV @ 1A, 5A |
| Voltage - Collector Emitter Breakdown (Max) | 400V |
| Current - Collector (Ic) (Max) | 8A |
| RoHS Status | RoHS Compliant |
PHE13007,127 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 8 @ 2A 5V DC current gain.A VCE saturation (Max) of 350mV @ 1A, 5A means Ic has reached its maximum value(saturated).A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
PHE13007,127 Features
the DC current gain for this device is 8 @ 2A 5V
the vce saturation(Max) is 350mV @ 1A, 5A
PHE13007,127 Applications
There are a lot of WeEn Semiconductors PHE13007,127 applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
