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ContactPD85035-E
Trans RF MOSFET N-CH 40V 8A 3-Pin PowerSO-10RF (Formed lead) Tube
- Manufacturer: STMicroelectronics
- NO: 761-PD85035-E
- Package: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
- Datasheet:
- Stock: 1928
- Description: Trans RF MOSFET N-CH 40V 8A 3-Pin PowerSO-10RF (Formed lead) Tube(Kg)
- Delivery:
- Payment:
In Stock
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Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 25 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Mount | Surface Mount |
| Package / Case | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) |
| Number of Pins | 3 |
| Packaging | Tube |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Max Operating Temperature | 165°C |
| Min Operating Temperature | -65°C |
| Additional Feature | HIGH RELIABILITY |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 95W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 250 |
| Current Rating | 8A |
| Frequency | 870MHz |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | PD85035 |
| Pin Count | 10 |
| JESD-30 Code | R-PDSO-G2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 95W |
| Case Connection | SOURCE |
| Current - Test | 350mA |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | N-CHANNEL |
| Transistor Type | LDMOS |
| Continuous Drain Current (ID) | 8A |
| Gate to Source Voltage (Vgs) | 15V |
| Gain | 17dB |
| Max Output Power | 40W |
| Drain Current-Max (Abs) (ID) | 8A |
| Drain to Source Breakdown Voltage | 40V |
| Power - Output | 15W |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Voltage - Test | 13.6V |
| Min Breakdown Voltage | 40V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
