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PCP1208-TD-H datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-PCP1208-TD-H
- Package: TO-243AA
- Datasheet:
- Stock: 8664
- Description: PCP1208-TD-H datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Surface Mount | YES |
| Number of Pins | 3 |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| JESD-609 Code | e6 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Bismuth (Sn/Bi) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 1.3W |
| Reach Compliance Code | not_compliant |
| Pin Count | 3 |
| Element Configuration | Single |
| Halogen Free | Halogen Free |
| Gain Bandwidth Product | 120MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 200mV |
| Max Collector Current | 1.5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA 5V |
| Current - Collector Cutoff (Max) | 1μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 35mA, 350mA |
| Collector Emitter Breakdown Voltage | 30V |
| Voltage - Collector Emitter Breakdown (Max) | 200V |
| Current - Collector (Ic) (Max) | 700mA |
| Collector Emitter Saturation Voltage | 115mV |
| Collector Base Voltage (VCBO) | 220V |
| Emitter Base Voltage (VEBO) | 8V |
| hFE Min | 200 |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
PCP1208-TD-H Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 100mA 5V.With a collector emitter saturation voltage of 115mV, it offers maximum design flexibility.A VCE saturation (Max) of 200mV @ 35mA, 350mA means Ic has reached its maximum value(saturated).The emitter base voltage can be kept at 8V for high efficiency.The device exhibits a collector-emitter breakdown at 200V.Maximum collector currents can be below 1.5A volts.
PCP1208-TD-H Features
the DC current gain for this device is 200 @ 100mA 5V
a collector emitter saturation voltage of 115mV
the vce saturation(Max) is 200mV @ 35mA, 350mA
the emitter base voltage is kept at 8V
PCP1208-TD-H Applications
There are a lot of ON Semiconductor PCP1208-TD-H applications of single BJT transistors.
- Driver
- Interface
- Inverter
- Muting
