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PBSS9410PA,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi
- Manufacturer: Nexperia USA Inc.
- NO: 554-PBSS9410PA,115
- Package: 3-PowerUDFN
- Datasheet:
- Stock: 5393
- Description: PBSS9410PA,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi(Kg)
- Delivery:
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| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 3-PowerUDFN |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Tin (Sn) |
| Max Power Dissipation | 2.1W |
| Terminal Position | DUAL |
| Frequency | 115MHz |
| Base Part Number | PBSS9410 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 2.1W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 115MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 100V |
| Max Collector Current | 2.7A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 170 @ 1A 2V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 135mA, 2.7A |
| Collector Emitter Breakdown Voltage | 100V |
| Transition Frequency | 115MHz |
| Max Breakdown Voltage | 100V |
| Collector Base Voltage (VCBO) | 100V |
| Emitter Base Voltage (VEBO) | -7V |
| hFE Min | 15 |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
PBSS9410PA,115 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 170 @ 1A 2V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 450mV @ 135mA, 2.7A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -7V.In this part, there is a transition frequency of 115MHz.Single BJT transistor can be broken down at a voltage of 100V volts.The maximum collector current is 2.7A volts.
PBSS9410PA,115 Features
the DC current gain for this device is 170 @ 1A 2V
the vce saturation(Max) is 450mV @ 135mA, 2.7A
the emitter base voltage is kept at -7V
a transition frequency of 115MHz
PBSS9410PA,115 Applications
There are a lot of Nexperia USA Inc. PBSS9410PA,115 applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
