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PBSS8510PA,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi
- Manufacturer: Nexperia USA Inc.
- NO: 554-PBSS8510PA,115
- Package: 3-PowerUDFN
- Datasheet:
- Stock: 4943
- Description: PBSS8510PA,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi(Kg)
- Delivery:
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| Parameters | |
|---|---|
| Radiation Hardening | No |
| Number of Pins | 3 |
| Package / Case | 3-PowerUDFN |
| Frequency | 150MHz |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C TJ |
| JESD-609 Code | e3 |
| Terminal Finish | Tin (Sn) |
| Terminal Position | DUAL |
| Base Part Number | PBSS8510 |
| Pin Count | 3 |
| Max Power Dissipation | 2.1W |
| Number of Elements | 1 |
| Case Connection | COLLECTOR |
| Gain Bandwidth Product | 150MHz |
| Polarity/Channel Type | NPN |
| Element Configuration | Single |
| Power Dissipation | 2.1W |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 5.2A |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Voltage (VCEO) | 100V |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Transistor Type | NPN |
| Transition Frequency | 150MHz |
| Current - Collector Cutoff (Max) | 100nA |
| Collector Base Voltage (VCBO) | 100V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 30 |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 95 @ 2A 2V |
| Vce Saturation (Max) @ Ib, Ic | 340mV @ 260mA, 5.2A |
| Factory Lead Time | 8 Weeks |
| Mount | Surface Mount |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
PBSS8510PA,115 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 95 @ 2A 2V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 340mV @ 260mA, 5.2A.With the emitter base voltage set at 6V, an efficient operation can be achieved.Parts of this part have transition frequencies of 150MHz.There is a breakdown input voltage of 100V volts that it can take.Maximum collector currents can be below 5.2A volts.
PBSS8510PA,115 Features
the DC current gain for this device is 95 @ 2A 2V
the vce saturation(Max) is 340mV @ 260mA, 5.2A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
PBSS8510PA,115 Applications
There are a lot of Nexperia USA Inc. PBSS8510PA,115 applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
