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PBSS8110X,135 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi
- Manufacturer: Nexperia USA Inc.
- NO: 554-PBSS8110X,135
- Package: TO-243AA
- Datasheet:
- Stock: 6022
- Description: PBSS8110X,135 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 4 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Number of Pins | 3 |
| Supplier Device Package | SOT-89 |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| Tolerance | 5% |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Frequency | 100MHz |
| Base Part Number | PBSS8110 |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 2W |
| Power - Max | 2W |
| Test Current | 5mA |
| Gain Bandwidth Product | 100MHz |
| Zener Voltage | 13V |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 100V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 250mA 10V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 100mA, 1A |
| Collector Emitter Breakdown Voltage | 100V |
| Voltage - Collector Emitter Breakdown (Max) | 100V |
| Current - Collector (Ic) (Max) | 1A |
| Max Breakdown Voltage | 100V |
| Frequency - Transition | 100MHz |
| Collector Base Voltage (VCBO) | 120V |
| Emitter Base Voltage (VEBO) | 5V |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
PBSS8110X,135 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 150 @ 250mA 10V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 200mV @ 100mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A breakdown input voltage of 100V volts can be used.SOT-89 is the supplier device package for this product.The device exhibits a collector-emitter breakdown at 100V.A maximum collector current of 1A volts is possible.
PBSS8110X,135 Features
the DC current gain for this device is 150 @ 250mA 10V
the vce saturation(Max) is 200mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the supplier device package of SOT-89
PBSS8110X,135 Applications
There are a lot of Nexperia USA Inc. PBSS8110X,135 applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
