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PBSS5630PA,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi
- Manufacturer: Nexperia USA Inc.
- NO: 554-PBSS5630PA,115
- Package: 3-PowerUDFN
- Datasheet:
- Stock: 842
- Description: PBSS5630PA,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 3-PowerUDFN |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Tin (Sn) |
| Max Power Dissipation | 2.1W |
| Terminal Position | DUAL |
| Frequency | 80MHz |
| Base Part Number | PBSS5630 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 2.1W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 80MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 30V |
| Max Collector Current | 6A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 190 @ 2A 2V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 350mV @ 300mA, 6A |
| Collector Emitter Breakdown Voltage | 30V |
| Transition Frequency | 80MHz |
| Max Breakdown Voltage | 30V |
| Collector Base Voltage (VCBO) | 30V |
| Emitter Base Voltage (VEBO) | -7V |
| hFE Min | 110 |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
PBSS5630PA,115 Overview
In this device, the DC current gain is 190 @ 2A 2V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 350mV @ 300mA, 6A.If the emitter base voltage is kept at -7V, a high level of efficiency can be achieved.In the part, the transition frequency is 80MHz.Single BJT transistor can be broken down at a voltage of 30V volts.In extreme cases, the collector current can be as low as 6A volts.
PBSS5630PA,115 Features
the DC current gain for this device is 190 @ 2A 2V
the vce saturation(Max) is 350mV @ 300mA, 6A
the emitter base voltage is kept at -7V
a transition frequency of 80MHz
PBSS5630PA,115 Applications
There are a lot of Nexperia USA Inc. PBSS5630PA,115 applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
