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PBSS5240XF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi
- Manufacturer: Nexperia USA Inc.
- NO: 554-PBSS5240XF
- Package: TO-243AA
- Datasheet:
- Stock: 145
- Description: PBSS5240XF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 4 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Number of Pins | 4 |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Power Dissipation | 500mW |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Frequency | 150MHz |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | PBSS5240 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1.35W |
| Power - Max | 500mW |
| Gain Bandwidth Product | 150MHz |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 40V |
| Max Collector Current | 2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 1mA 5V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 140mV @ 5mA, 100mA |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | -630mV |
| Max Breakdown Voltage | 40V |
| Collector Base Voltage (VCBO) | 40V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 300 |
| RoHS Status | ROHS3 Compliant |
PBSS5240XF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 1mA 5V.A collector emitter saturation voltage of -630mV ensures maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 140mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.A breakdown input voltage of 40V volts can be used.The maximum collector current is 2A volts.
PBSS5240XF Features
the DC current gain for this device is 300 @ 1mA 5V
a collector emitter saturation voltage of -630mV
the vce saturation(Max) is 140mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
PBSS5240XF Applications
There are a lot of Nexperia USA Inc. PBSS5240XF applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
