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ContactPBSS5160V,115
PBSS5160V,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi
- Manufacturer: Nexperia USA Inc.
- NO: 554-PBSS5160V,115
- Package: SOT-563, SOT-666
- Datasheet:
- Stock: 9684
- Description: PBSS5160V,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 4 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Power Dissipation | 500mW |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Frequency | 220MHz |
| Base Part Number | PBSS5160 |
| Pin Count | 6 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 500mW |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 220MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 60V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 500mA 5V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 330mV @ 100mA, 1A |
| Collector Emitter Breakdown Voltage | 60V |
| Current - Collector (Ic) (Max) | 900mA |
| Transition Frequency | 220MHz |
| Max Breakdown Voltage | 60V |
| Collector Base Voltage (VCBO) | 80V |
| Emitter Base Voltage (VEBO) | 5V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
PBSS5160V,115 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 150 @ 500mA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In this part, there is a transition frequency of 220MHz.Single BJT transistor can be broken down at a voltage of 60V volts.A maximum collector current of 1A volts can be achieved.
PBSS5160V,115 Features
the DC current gain for this device is 150 @ 500mA 5V
the vce saturation(Max) is 330mV @ 100mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 220MHz
PBSS5160V,115 Applications
There are a lot of Nexperia USA Inc. PBSS5160V,115 applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
