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PBSS4240XF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi
- Manufacturer: Nexperia USA Inc.
- NO: 554-PBSS4240XF
- Package: TO-243AA
- Datasheet:
- Stock: 2354
- Description: PBSS4240XF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Vce Saturation (Max) @ Ib, Ic | 140mV @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 40V |
| Voltage - Collector Emitter Breakdown (Max) | 40V |
| Current - Collector (Ic) (Max) | 2A |
| Collector Emitter Saturation Voltage | 510mV |
| Max Breakdown Voltage | 40V |
| Frequency - Transition | 150MHz |
| Collector Base Voltage (VCBO) | 40V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 300 |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 4 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Number of Pins | 4 |
| Supplier Device Package | SOT-89 |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 500mW |
| Base Part Number | PBSS4240 |
| Polarity | NPN |
| Element Configuration | Single |
| Power - Max | 500mW |
| Gain Bandwidth Product | 150MHz |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 140mV |
| Max Collector Current | 2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 500mA 5V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
PBSS4240XF Overview
In this device, the DC current gain is 300 @ 500mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 510mV, which allows maximum flexibilSingle BJT transistory in design.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.An emitter's base voltage can be kept at 5V to gain high efficiency.Single BJT transistor can be broken down at a voltage of 40V volts.Product package SOT-89 comes from the supplier.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.In extreme cases, the collector current can be as low as 2A volts.
PBSS4240XF Features
the DC current gain for this device is 300 @ 500mA 5V
a collector emitter saturation voltage of 510mV
the vce saturation(Max) is 140mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of SOT-89
PBSS4240XF Applications
There are a lot of Nexperia USA Inc. PBSS4240XF applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
