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PBSS4041NX,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi
- Manufacturer: Nexperia USA Inc.
- NO: 554-PBSS4041NX,115
- Package: TO-243AA
- Datasheet:
- Stock: 1942
- Description: PBSS4041NX,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 4 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Tin (Sn) |
| Max Power Dissipation | 2.5W |
| Terminal Form | FLAT |
| Frequency | 130MHz |
| Base Part Number | PBSS4041N |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-F3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 2.5W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 130MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 60V |
| Max Collector Current | 6.2A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 4A 2V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 210mV @ 300mA, 6A |
| Collector Emitter Breakdown Voltage | 60V |
| Transition Frequency | 130MHz |
| Collector Emitter Saturation Voltage | 150mV |
| Max Breakdown Voltage | 60V |
| Collector Base Voltage (VCBO) | 60V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 75 |
| Max Junction Temperature (Tj) | 150°C |
| Ambient Temperature Range High | 150°C |
| Height | 1.6mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
PBSS4041NX,115 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 150 @ 4A 2V DC current gain.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 150mV, which allows maximum flexibilSingle BJT transistory in design.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 210mV @ 300mA, 6A.Keeping the emitter base voltage at 5V can result in a high level of efficiency.A transition frequency of 130MHz is present in the part.Single BJT transistor can be broken down at a voltage of 60V volts.Single BJT transistor is possible for the collector current to fall as low as 6.2A volts at Single BJT transistors maximum.
PBSS4041NX,115 Features
the DC current gain for this device is 150 @ 4A 2V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 210mV @ 300mA, 6A
the emitter base voltage is kept at 5V
a transition frequency of 130MHz
PBSS4041NX,115 Applications
There are a lot of Nexperia USA Inc. PBSS4041NX,115 applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
