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PBSS3515M,315 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi
- Manufacturer: Nexperia USA Inc.
- NO: 554-PBSS3515M,315
- Package: SC-101, SOT-883
- Datasheet:
- Stock: 3305
- Description: PBSS3515M,315 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SC-101, SOT-883 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2002 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Power Dissipation | 430mW |
| Terminal Position | BOTTOM |
| Frequency | 280MHz |
| Base Part Number | PBSS3515 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 430mW |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 280MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 15V |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 100mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 50mA, 500mA |
| Collector Emitter Breakdown Voltage | 15V |
| Transition Frequency | 280MHz |
| Max Breakdown Voltage | 15V |
| Collector Base Voltage (VCBO) | 15V |
| Emitter Base Voltage (VEBO) | -6V |
| hFE Min | 200 |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
PBSS3515M,315 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 150 @ 100mA 2V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Emitter base voltages of -6V can achieve high levels of efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 280MHz.This device can take an input voltage of 15V volts before it breaks down.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
PBSS3515M,315 Features
the DC current gain for this device is 150 @ 100mA 2V
the vce saturation(Max) is 250mV @ 50mA, 500mA
the emitter base voltage is kept at -6V
a transition frequency of 280MHz
PBSS3515M,315 Applications
There are a lot of Nexperia USA Inc. PBSS3515M,315 applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
