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PBSS306NX,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi
- Manufacturer: Nexperia USA Inc.
- NO: 554-PBSS306NX,115
- Package: TO-243AA
- Datasheet:
- Stock: 6862
- Description: PBSS306NX,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Max Power Dissipation | 2.1W |
| Terminal Form | FLAT |
| Frequency | 110MHz |
| Base Part Number | PBSS306N |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 2.1W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 110MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 100V |
| Max Collector Current | 4.5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 2A 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 245mV @ 225mA, 4.5A |
| Collector Emitter Breakdown Voltage | 100V |
| Transition Frequency | 110MHz |
| Max Breakdown Voltage | 100V |
| Collector Base Voltage (VCBO) | 100V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 200 |
| Height | 6.35mm |
| Length | 12.7mm |
| Width | 6.35mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 4 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Number of Pins | 3 |
| Weight | 4.535924g |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
PBSS306NX,115 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 2A 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 245mV @ 225mA, 4.5A.The emitter base voltage can be kept at 5V for high efficiency.Parts of this part have transition frequencies of 110MHz.The breakdown input voltage is 100V volts.A maximum collector current of 4.5A volts is possible.
PBSS306NX,115 Features
the DC current gain for this device is 100 @ 2A 2V
the vce saturation(Max) is 245mV @ 225mA, 4.5A
the emitter base voltage is kept at 5V
a transition frequency of 110MHz
PBSS306NX,115 Applications
There are a lot of Nexperia USA Inc. PBSS306NX,115 applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
