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PBSS302PDH datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi
- Manufacturer: Nexperia USA Inc.
- NO: 554-PBSS302PDH
- Package: SC-74, SOT-457
- Datasheet:
- Stock: 6137
- Description: PBSS302PDH datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 4 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SC-74, SOT-457 |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Max Power Dissipation | 2.5W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Pin Count | 6 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power - Max | 360mW |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 110MHz |
| Polarity/Channel Type | PNP |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 450mV |
| Max Collector Current | 4A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 175 @ 2A 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 600mA, 6A |
| Collector Emitter Breakdown Voltage | 40V |
| Transition Frequency | 110MHz |
| Collector Emitter Saturation Voltage | -46mV |
| Max Breakdown Voltage | 40V |
| Collector Base Voltage (VCBO) | -40V |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 200 |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
PBSS302PDH Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 175 @ 2A 2V.The collector emitter saturation voltage is -46mV, which allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.A transition frequency of 110MHz is present in the part.A breakdown input voltage of 40V volts can be used.Maximum collector currents can be below 4A volts.
PBSS302PDH Features
the DC current gain for this device is 175 @ 2A 2V
a collector emitter saturation voltage of -46mV
the vce saturation(Max) is 450mV @ 600mA, 6A
the emitter base voltage is kept at -5V
a transition frequency of 110MHz
PBSS302PDH Applications
There are a lot of Nexperia USA Inc. PBSS302PDH applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
