PBRN113ET,215

PBRN113ET,215 datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Nexperia USA Inc. stock available at Utmel


  • Manufacturer: Nexperia USA Inc.
  • NO: 554-PBRN113ET,215
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: pdf
  • Stock: 12915
  • Description: PBRN113ET,215 datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Nexperia USA Inc. stock available at Utmel(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 4.535924g
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO 1
Max Power Dissipation 250mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number PBRN113
Pin Count 3
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 250mW
Transistor Application SWITCHING
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 600mA
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 300mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 1.15V @ 8mA, 800mA
Collector Emitter Breakdown Voltage 40V
Collector Emitter Saturation Voltage 1.15V
Max Breakdown Voltage 40V
Emitter Base Voltage (VEBO) 10V
hFE Min 270
Resistor - Base (R1) 1 k Ω
Resistor - Emitter Base (R2) 1 k Ω
Height 1mm
Length 3mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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