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PBHV9540Z,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi
- Manufacturer: Nexperia USA Inc.
- NO: 554-PBHV9540Z,115
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 594
- Description: PBHV9540Z,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 4 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 4 |
| Supplier Device Package | SOT-223 |
| Weight | 4.535924g |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.45W |
| Frequency | 30MHz |
| Base Part Number | PBHV9540 |
| Number of Elements | 1 |
| Polarity | PNP |
| Element Configuration | Single |
| Power Dissipation | 1.45W |
| Power - Max | 1.45W |
| Gain Bandwidth Product | 30MHz |
| Transistor Type | PNP |
| Collector Emitter Voltage (VCEO) | 400V |
| Max Collector Current | 500mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 300mA 10V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 320mV @ 100mA, 500mA |
| Collector Emitter Breakdown Voltage | 400V |
| Voltage - Collector Emitter Breakdown (Max) | 400V |
| Current - Collector (Ic) (Max) | 500mA |
| Max Breakdown Voltage | 400V |
| Frequency - Transition | 30MHz |
| Collector Base Voltage (VCBO) | 500V |
| Emitter Base Voltage (VEBO) | -6V |
| hFE Min | 65 |
| Height | 6.35mm |
| Length | 12.7mm |
| Width | 6.35mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
PBHV9540Z,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 80 @ 300mA 10V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 320mV @ 100mA, 500mA.The base voltage of the emitter can be kept at -6V to achieve high efficiency.Breakdown input voltage is 400V volts.This product comes in a SOT-223 device package from the supplier.This device displays a 400V maximum voltage - Collector Emitter Breakdown.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
PBHV9540Z,115 Features
the DC current gain for this device is 80 @ 300mA 10V
the vce saturation(Max) is 320mV @ 100mA, 500mA
the emitter base voltage is kept at -6V
the supplier device package of SOT-223
PBHV9540Z,115 Applications
There are a lot of Nexperia USA Inc. PBHV9540Z,115 applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
