PBHV9040T,215

PBHV9040T,215 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi


  • Manufacturer: Nexperia USA Inc.
  • NO: 554-PBHV9040T,215
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: pdf
  • Stock: 1106
  • Description: PBHV9040T,215 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Tolerance 5%
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Axial
ECCN Code EAR99
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 55MHz
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number PBHV9040
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 300mW
Transistor Application SWITCHING
Test Current 2mA
Gain Bandwidth Product 55MHz
Polarity/Channel Type PNP
Zener Voltage 75V
Transistor Type PNP
Collector Emitter Voltage (VCEO) 400V
Max Collector Current 250mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 100mA 10V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 200mV @ 20mA, 100mA
Collector Emitter Breakdown Voltage 400V
Transition Frequency 55MHz
Max Breakdown Voltage 400V
Collector Base Voltage (VCBO) 500V
Emitter Base Voltage (VEBO) 6V
hFE Min 200
Outside Diameter 2 mm
Zener Current 2mA
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

PBHV9040T,215 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 80 @ 100mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 200mV @ 20mA, 100mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.Parts of this part have transition frequencies of 55MHz.Breakdown input voltage is 400V volts.A maximum collector current of 250mA volts can be achieved.

PBHV9040T,215 Features


the DC current gain for this device is 80 @ 100mA 10V
the vce saturation(Max) is 200mV @ 20mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 55MHz

PBHV9040T,215 Applications


There are a lot of Nexperia USA Inc. PBHV9040T,215 applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

In Stock

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