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PBHV8115Z,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi
- Manufacturer: Nexperia USA Inc.
- NO: 554-PBHV8115Z,115
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 7214
- Description: PBHV8115Z,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 4 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Power Dissipation | 1.4W |
| Terminal Form | GULL WING |
| Frequency | 30MHz |
| Base Part Number | PBHV8115 |
| Pin Count | 4 |
| Number of Elements | 1 |
| Element Configuration | Dual |
| Power Dissipation | 1.4W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 30MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 150V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 500mA 10V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 350mV @ 200mA, 1A |
| Collector Emitter Breakdown Voltage | 150V |
| Transition Frequency | 30MHz |
| Max Breakdown Voltage | 150V |
| Collector Base Voltage (VCBO) | 400V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 100 |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
PBHV8115Z,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 500mA 10V.When VCE saturation is 350mV @ 200mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.30MHz is present in the transition frequency.The breakdown input voltage is 150V volts.In extreme cases, the collector current can be as low as 1A volts.
PBHV8115Z,115 Features
the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 350mV @ 200mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 30MHz
PBHV8115Z,115 Applications
There are a lot of Nexperia USA Inc. PBHV8115Z,115 applications of single BJT transistors.
- Muting
- Interface
- Inverter
- Driver
