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PBHV8115X,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi
- Manufacturer: Nexperia USA Inc.
- NO: 554-PBHV8115X,115
- Package: TO-243AA
- Datasheet:
- Stock: 296
- Description: PBHV8115X,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 4 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Number of Pins | 3 |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Terminal Finish | Tin (Sn) |
| Max Power Dissipation | 1.5W |
| Frequency | 30MHz |
| Base Part Number | PBHV8115 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation | 520mW |
| Gain Bandwidth Product | 30MHz |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 150V |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA 10V |
| Current - Collector Cutoff (Max) | 100nA |
| Vce Saturation (Max) @ Ib, Ic | 50mV @ 20mA, 100mA |
| Collector Emitter Breakdown Voltage | 150V |
| Collector Emitter Saturation Voltage | 33mV |
| Max Breakdown Voltage | 150V |
| Collector Base Voltage (VCBO) | 400V |
| Emitter Base Voltage (VEBO) | 6V |
| hFE Min | 10 |
| Max Junction Temperature (Tj) | 150°C |
| Ambient Temperature Range High | 150°C |
| Height | 1.6mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
PBHV8115X,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 50mA 10V.The collector emitter saturation voltage is 33mV, giving you a wide variety of design options.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 50mV @ 20mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.An input voltage of 150V volts is the breakdown voltage.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
PBHV8115X,115 Features
the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of 33mV
the vce saturation(Max) is 50mV @ 20mA, 100mA
the emitter base voltage is kept at 6V
PBHV8115X,115 Applications
There are a lot of Nexperia USA Inc. PBHV8115X,115 applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
