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NZT651 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NZT651
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 3600
- Description: NZT651 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 2A 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Collector Emitter Breakdown Voltage | 60V |
| Transition Frequency | 75MHz |
| Collector Emitter Saturation Voltage | 500mV |
| Max Breakdown Voltage | 60V |
| Collector Base Voltage (VCBO) | 80V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 75 |
| Height | 6.35mm |
| Length | 6.35mm |
| Width | 6.35mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 45 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 4 |
| Weight | 188mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 60V |
| Max Power Dissipation | 1.2W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | 4A |
| Frequency | 75MHz |
| Base Part Number | NZT651 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1.2W |
| Case Connection | COLLECTOR |
| Transistor Application | SWITCHING |
| Gain Bandwidth Product | 75MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 60V |
| Max Collector Current | 4A |
NZT651 Overview
DC current gain in this device equals 40 @ 2A 2V, which is the ratio of the base current to the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 200mA, 2A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 4A.The part has a transition frequency of 75MHz.There is a breakdown input voltage of 60V volts that it can take.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.
NZT651 Features
the DC current gain for this device is 40 @ 2A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 75MHz
NZT651 Applications
There are a lot of ON Semiconductor NZT651 applications of single BJT transistors.
- Driver
- Inverter
- Interface
- Muting
