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NZT560 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NZT560
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 8970
- Description: NZT560 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 5 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 4 |
| Weight | 188mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 60V |
| Max Power Dissipation | 1W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | 3A |
| Frequency | 75MHz |
| Base Part Number | NZT560 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1W |
| Case Connection | COLLECTOR |
| Gain Bandwidth Product | 75MHz |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 60V |
| Max Collector Current | 3A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 300mA, 3A |
| Collector Emitter Breakdown Voltage | 60V |
| Transition Frequency | 75MHz |
| Collector Emitter Saturation Voltage | 450mV |
| Max Breakdown Voltage | 60V |
| Collector Base Voltage (VCBO) | 80V |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 100 |
| Height | 1.6mm |
| Length | 6.5mm |
| Width | 3.5mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
NZT560 Overview
This device has a DC current gain of 100 @ 500mA 2V, which is the ratio between the base current and the collector current.With a collector emitter saturation voltage of 450mV, it offers maximum design flexibility.When VCE saturation is 450mV @ 300mA, 3A, transistor means Ic has reached transistors maximum value (saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 3A.The part has a transition frequency of 75MHz.Single BJT transistor can be broken down at a voltage of 60V volts.In extreme cases, the collector current can be as low as 3A volts.
NZT560 Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of 450mV
the vce saturation(Max) is 450mV @ 300mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 75MHz
NZT560 Applications
There are a lot of ON Semiconductor NZT560 applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
