NX1029X,115

MOSFET N/P-CH 60V/50V SOT666


  • Manufacturer: Nexperia USA Inc.
  • NO: 554-NX1029X,115
  • Package: SOT-563, SOT-666
  • Datasheet: pdf
  • Stock: 2293
  • Description: MOSFET N/P-CH 60V/50V SOT666(Kg)

Quantity:


  • Delivery: Delivery
  • Payment: payment

In Stock

Please send RFQ , we will respond immediately.

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User guide

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Means of Payment

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RFQ (Request for Quotations)

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Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Max Power Dissipation 500mW
Pin Count 6
Number of Elements 2
Power Dissipation 500mW
FET Type N and P-Channel
Rds On (Max) @ Id, Vgs 7.5 Ω @ 100mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 36pF @ 25V
Current - Continuous Drain (Id) @ 25°C 330mA 170mA
Gate Charge (Qg) (Max) @ Vgs 0.35nC @ 5V
Rise Time 11ns
Drain to Source Voltage (Vdss) 60V 50V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 48 ns
Continuous Drain Current (ID) 170mA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -50V
FET Feature Logic Level Gate
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

In Stock

Please send RFQ , we will respond immediately.