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NVMFD5C674NLT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NVMFD5C674NLT1G
- Package: 8-PowerTDFN
- Datasheet:
- Stock: 7438
- Description: NVMFD5C674NLT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 48 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Series | Automotive, AEC-Q101 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Terminal Finish | Tin (Sn) |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PDSO-F6 |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Power - Max | 3W Ta 37W Tc |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 14.4m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds | 640pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 11A Ta 42A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 4.7nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 0.0204Ohm |
| Pulsed Drain Current-Max (IDM) | 119A |
| DS Breakdown Voltage-Min | 60V |
| Avalanche Energy Rating (Eas) | 61 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Standard |
| RoHS Status | ROHS3 Compliant |
NVMFD5C674NLT1G Description
Automotive power MOSFET, with 5x6 mm flat lead package, compact and efficient design, including high heat Performance. The wettable flank option can be used for enhanced optical inspection. AEC-Q101 qualified MOSFET and PPAP are suitable for automotive applications.
NVMFD5C674NLT1G Features
? Small Footprint (5x6 mm) for Compact Design
? Low RDS(on) to Minimize Conduction Losses
? Low QG and Capacitance to Minimize Driver Losses
? NVMFD5C674NLWF ? Wettable Flank Option for Enhanced Optical
Inspection
? AEC?Q101 Qualified and PPAP Capable
? These Devices are Pb?Free and are RoHS Compliant
NVMFD5C674NLT1G Applications
Solenoid driver
Low side / high side driver
