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ContactNVMFD5C668NLWFT1G
NVMFD5C668NLWFT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NVMFD5C668NLWFT1G
- Package: -
- Datasheet:
- Stock: 650
- Description: NVMFD5C668NLWFT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
In Stock
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| Parameters | |
|---|---|
| Factory Lead Time | 48 Weeks |
| Packaging | Tape & Reel (TR) |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 |
| Terminal Finish | Tin (Sn) |
| Reach Compliance Code | not_compliant |
NVMFD5C668NLWFT1G Description
The NVMFD5C668NLWFT1G is a MOSFET – Power, Dual N-Channel, 60 V, 6.5 m, 68 A. A form of field-effect transistor (FET) called a metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is most frequently made by carefully controlling the oxidation of silicon. It has an isolated gate, whose voltage controls the device's conductivity. Electronic signals can be switched or amplified using this material's capacity to change conductivity in response to the amount of applied voltage. About the same thing as MOSFET is a metal-insulator-semiconductor field-effect transistor (MISFET). IGFET, or insulated-gate field-effect transistor, is another equivalent term.
NVMFD5C668NLWFT1G Features
NVMFD5C668NLWF − Wettable Flank Option for Enhanced Optical Inspection
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
NVMFD5C668NLWFT1G Applications
Automotive
Industrial
Communications systems in particular
Automotive electronics
As switching devices in electronic control units
As power converters in modern electric vehicles
