NVMFD5C478NLT1G

NVMFD5C478NLT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-NVMFD5C478NLT1G
  • Package: 8-PowerTDFN
  • Datasheet: pdf
  • Stock: 2985
  • Description: NVMFD5C478NLT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 48 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 3.1W Ta 23W Tc
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 14.5m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id 2.2V @ 20μA
Input Capacitance (Ciss) (Max) @ Vds 420pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10.5A Ta 29A Tc
Gate Charge (Qg) (Max) @ Vgs 8.1nC @ 10V
Drain to Source Voltage (Vdss) 40V
FET Feature Standard
RoHS Status RoHS Compliant

NVMFD5C478NLT1G       Description


   Power MOSFET is a specific type of metal oxide semiconductor field effect transistor (MOSFET) designed to handle significant power levels. Compared with other new power semiconductor devices, such as insulated gate bipolar transistor (IGBT) or thyristor, its main advantages are fast switching speed and high efficiency at low voltage. It shares an isolation door with IGBT, making it easier to drive. They may be affected by low gain, sometimes to the extent that the gate voltage needs to be higher than the controlled voltage.


NVMFD5C478NLT1G               Features


? Small Footprint (5 x 6 mm) for Compact Design

? Low RDS(on) to Minimize Conduction Losses

? Low Capacitance to Minimize Driver Losses

? NVMFD5C478NLWF ? Wettable Flanks Product

? AEC?Q101 Qualified and PPAP Capable

? These Devices are Pb?Free and are RoHS Compliant

 

NVMFD5C478NLT1G                     Applications


 insulated gate bipolar transistor

 


 



In Stock

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