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NVMFD5877NLT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NVMFD5877NLT1G
- Package: 8-PowerTDFN
- Datasheet:
- Stock: 5242
- Description: NVMFD5877NLT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 13 Weeks |
| Lifecycle Status | ACTIVE, NOT REC (Last Updated: 1 day ago) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Surface Mount | YES |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 39MOhm |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 3.2W |
| Terminal Form | FLAT |
| Pin Count | 8 |
| JESD-30 Code | R-PDSO-F6 |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 23W |
| Case Connection | DRAIN |
| Turn On Delay Time | 8.1 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 39m Ω @ 7.5A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 540pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Turn-Off Delay Time | 14.5 ns |
| Continuous Drain Current (ID) | 17A |
| Threshold Voltage | 3V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 6A |
| Drain to Source Breakdown Voltage | 60V |
| Pulsed Drain Current-Max (IDM) | 74A |
| Avalanche Energy Rating (Eas) | 10.5 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Height | 1.05mm |
| Length | 6.1mm |
| Width | 5.1mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
NVMFD5877NLT1G Description
ROHM N-channel and P-channel MOSFETs NVMFD5877NLT1G feature low on-resistance and high switching speed. It has a wide lineup from small signal MOSFETs to power MOSFETs and can be used in various applications.
NVMFD5877NLT1G Features
? Low RDS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? NVMFD5877NLWF ? Wettable Flanks Option for Enhanced Optical
Inspection
? AEC?Q101 Qualified and PPAP Capable
? These Devices are Pb?Free, Halogen Free and are RoHS Compliant
NVMFD5877NLT1G Applications
It has a wide lineup from small signal MOSFETs to power MOSFETs and can be used in various applications.
