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NVMFD5853NLT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NVMFD5853NLT1G
- Package: 8-PowerTDFN
- Datasheet:
- Stock: 6060
- Description: NVMFD5853NLT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
| Drain to Source Voltage (Vdss) | 40V |
| Turn-Off Delay Time | 22 ns |
| Continuous Drain Current (ID) | 12A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 34A |
| Drain-source On Resistance-Max | 0.015Ohm |
| Drain to Source Breakdown Voltage | 40V |
| Pulsed Drain Current-Max (IDM) | 165A |
| Avalanche Energy Rating (Eas) | 40 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Height | 1.05mm |
| Length | 6.1mm |
| Width | 5.1mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 13 Weeks |
| Lifecycle Status | ACTIVE, NOT REC (Last Updated: 2 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Surface Mount | YES |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 3W |
| Terminal Form | FLAT |
| Pin Count | 8 |
| Reference Standard | AEC-Q101 |
| JESD-30 Code | R-PDSO-F6 |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 10 ns |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 10m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 250μA |
NVMFD5853NLT1G Description
A power MOSFET NVMFD5853NLT1G is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle high-level powers. The power MOSFET?ˉs are constructed in a V configuration.
NVMFD5853NLT1G Features
? Small Footprint (5x6 mm) for Compact Designs
? Low RDS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? NVMFD5853NLWF ? Wettable Flanks Option for Enhanced Optical Inspection
? AEC?Q101 Qualified and PPAP Capable
? This is a Pb?Free Device
NVMFD5853NLT1G Applications
high-level powers
