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NTZD5110NT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NTZD5110NT1G
- Package: SOT-563, SOT-666
- Datasheet:
- Stock: 438
- Description: NTZD5110NT1G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 4 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Surface Mount | YES |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 1.6Ohm |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 900mW |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | NTZD5110N |
| Pin Count | 6 |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 250mW |
| Turn On Delay Time | 12 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1.6 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 24.5pF @ 20V |
| Gate Charge (Qg) (Max) @ Vgs | 0.7nC @ 4.5V |
| Rise Time | 7.3ns |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time (Typ) | 7.3 ns |
| Turn-Off Delay Time | 63.7 ns |
| Continuous Drain Current (ID) | 294mA |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 60V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Height | 600μm |
| Length | 1.7mm |
| Width | 1.3mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
NTZD5110NT1G Description
NTZD5110NT1G equipped with ESD protection up to 2KV, this Halogen-free device is suitable for use as a unidirectional or bidirectional load switch, facilitated by its common drain configuration. Used in DC-DC conversion, load switching and battery protection, additional benefits include its high energy efficiency, fast switch speed and low input and output leakage. It is also available in the TSSOP-8 package.
NTZD5110NT1G Features
? Low RDS(on) Improving System Efficiency
? Low Threshold Voltage
? ESD Protected Gate
? Small Footprint 1.6 x 1.6 mm
? These are Pb?Free Devices
NTZD5110NT1G Applications
? Load/Power Switches
? Driver Circuits: Relays, Lamps, Displays, Memories, etc.
? Battery Management/Battery Operated Systems
? Cell Phones, Digital Cameras, PDAs, Pagers
