NTZD3155CT1H

NTZD3155CT1H datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Utmel


  • Manufacturer: ON Semiconductor
  • NO: 598-NTZD3155CT1H
  • Package: SOT-563, SOT-666
  • Datasheet: pdf
  • Stock: 2194
  • Description: NTZD3155CT1H datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Utmel(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 26 Weeks
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Surface Mount YES
Number of Pins 6
Weight 8.193012mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 250mW
Terminal Form FLAT
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 550m Ω @ 540mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 150pF @ 16V
Current - Continuous Drain (Id) @ 25°C 540mA 430mA
Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID) 430mA
Gate to Source Voltage (Vgs) 6V
Drain Current-Max (Abs) (ID) 0.54A
Drain-source On Resistance-Max 0.55Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Radiation Hardening No
RoHS Status RoHS Compliant

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