NTUD3169CZT5G

NTUD3169CZT5G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-NTUD3169CZT5G
  • Package: SOT-963
  • Datasheet: pdf
  • Stock: 5970
  • Description: NTUD3169CZT5G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case SOT-963
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 710mW
Terminal Form FLAT
Base Part Number NTUD3169CZ
Pin Count 6
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 200mW
Turn On Delay Time 26 ns
Power - Max 125mW
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.5 Ω @ 100mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 12.5pF @ 15V
Current - Continuous Drain (Id) @ 25°C 220mA 200mA
Rise Time 46ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 145 ns
Turn-Off Delay Time 196 ns
Continuous Drain Current (ID) 280mA
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 400μm
Length 1.05mm
Width 850μm
Radiation Hardening No

NTUD3169CZT5G             Description


   A small signal is an AC signal superimposed on a bias signal (or on a DC constant signal) (more professionally, a signal with a zero average value). Decomposing the signal into two components allows the use of superposition techniques to simplify further analysis.


NTUD3169CZT5G           Features

? Complementary MOSFET Device

? Offers a Low RDS(on) Solution in the Ultra Small 1.0x1.0 mm

Package

? 1.5 V Gate Voltage Rating

? Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely

Thin Environments such as Portable Electronics.

? This is a Pb?Free Device


NTUD3169CZT5G           Applications

? Load Switch with Level Shift

? Optimized for Power Management in Ultra Portable Equipment

 






In Stock

Please send RFQ , we will respond immediately.