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ContactNTMFD4901NFT3G
MOSFET 2N-CH 30V 8DFN
- Manufacturer: ON Semiconductor
- NO: 598-NTMFD4901NFT3G
- Package: 8-PowerTDFN
- Datasheet:
- Stock: 9210
- Description: MOSFET 2N-CH 30V 8DFN(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 7 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Power Dissipation | 1.2W |
| Terminal Form | FLAT |
| Pin Count | 8 |
| Number of Elements | 2 |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
| Case Connection | DRAIN SOURCE |
| Power - Max | 1.1W 1.2W |
| FET Type | 2 N-Channel (Dual), Schottky |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 6.5m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1150pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 10.3A 17.9A |
| Gate Charge (Qg) (Max) @ Vgs | 9.7nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 30V |
| Continuous Drain Current (ID) | 17.9A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 13.5A |
| Drain-source On Resistance-Max | 0.0035Ohm |
| Pulsed Drain Current-Max (IDM) | 100A |
| DS Breakdown Voltage-Min | 30V |
| Avalanche Energy Rating (Eas) | 115 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
