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ContactNTMD6N04R2G
N-CHANNEL POWER MOSFET
- Manufacturer: Rochester Electronics
- NO: 699-NTMD6N04R2G
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 4409
- Description: N-CHANNEL POWER MOSFET(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| Terminal Finish | MATTE TIN |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 8 |
| JESD-30 Code | R-PDSO-G8 |
| Qualification Status | COMMERCIAL |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Power - Max | 1.29W |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 34m Ω @ 5.8A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 32V |
| Current - Continuous Drain (Id) @ 25°C | 4.6A |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| Drain to Source Voltage (Vdss) | 40V |
| Drain Current-Max (Abs) (ID) | 4.6A |
| Drain-source On Resistance-Max | 0.034Ohm |
| Pulsed Drain Current-Max (IDM) | 29A |
| DS Breakdown Voltage-Min | 40V |
| Avalanche Energy Rating (Eas) | 245 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| RoHS Status | ROHS3 Compliant |
