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NTMD6N03R2G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NTMD6N03R2G
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 4107
- Description: NTMD6N03R2G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 2 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 32MOhm |
| Subcategory | FET General Purpose Powers |
| Voltage - Rated DC | 30V |
| Max Power Dissipation | 2W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 6A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | NTMD6N03 |
| Pin Count | 8 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Power - Max | 1.29W |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 32m Ω @ 6A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 950pF @ 24V |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| Rise Time | 22ns |
| Fall Time (Typ) | 45 ns |
| Turn-Off Delay Time | 45 ns |
| Continuous Drain Current (ID) | 6A |
| Threshold Voltage | 1.8V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 6A |
| Drain to Source Breakdown Voltage | 30V |
| Pulsed Drain Current-Max (IDM) | 30A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
NTMD6N03R2G Description
In the power MOSFET, there is available of P-channel. The characteristics are similar to the N-channel MOSFET. The direction of the current and voltage polarities are in reverse direction.
NTMD6N03R2G Features
? Designed for use in low voltage, high speed switching applications
? Ultra Low On?Resistance Provides
Higher Efficiency and Extends Battery Life
? RDS(on) = 0.024 , VGS = 10 V (Typ)
? RDS(on) = 0.030 , VGS = 4.5 V (Typ)
? Miniature SOIC?8 Surface Mount Package Saves Board Space
? Diode is Characterized for Use in Bridge Circuits
? Diode Exhibits High Speed, with Soft Recovery
? AEC Q101 Qualified ? NVMD6N03R2
? These Devices are Pb?Free and are RoHS Compliant
NTMD6N03R2G Applications
? DC?DC Converters
? Computers
? Printers
? Cellular and Cordless Phones
? Disk Drives and Tape Drives
