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NTMD4N03R2G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NTMD4N03R2G
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 6882
- Description: NTMD4N03R2G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Turn On Delay Time | 7 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 60m Ω @ 4A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 20V |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V |
| Rise Time | 14ns |
| Fall Time (Typ) | 10 ns |
| Turn-Off Delay Time | 16 ns |
| Continuous Drain Current (ID) | 4A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 4A |
| Drain to Source Breakdown Voltage | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Height | 1.5mm |
| Length | 5mm |
| Width | 4mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 36 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Surface Mount | YES |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 48MOhm |
| Subcategory | FET General Purpose Powers |
| Voltage - Rated DC | 30V |
| Max Power Dissipation | 2W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 4A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | NTMD4N03 |
| Pin Count | 8 |
NTMD4N03R2G Description
The half-dual N-channel power MOSFET NTMD4N03R2G is integrated with Schottky and packaged in DFN8 (SO8FL). These N-channel power MOSFET adopt a power-level solution in a common package to minimize board space, parasitic inductance and power loss. Double N-channel power MOSFET lead-free, halogen-free / BFR-free, in line with RoHS standards. Typical applications include DC-DC converters, system voltage rails and load points.
NTMD4N03R2G Features
? Designed for use in low voltage, high speed switching applications
? Ultra Low On?Resistance Provides
Higher Efficiency and Extends Battery Life
? RDS(on) = 0.048 , VGS = 10 V (Typ)
? RDS(on) = 0.065 , VGS = 4.5 V (Typ)
? Miniature SO?8 Surface Mount Package ? Saves Board Space
? Diode is Characterized for Use in Bridge Circuits
? Diode Exhibits High Speed, with Soft Recovery
? NVMD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC?Q101
Qualified and PPAP Capable*
? These Devices are Pb?Free and are RoHS Compliant
NTMD4N03R2G Applications
? DC?DC Converters
? Computers
? Printers
? Cellular and Cordless Phones
? Disk Drives and Tape Drives
