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NTMD3P03R2G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NTMD3P03R2G
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 8949
- Description: NTMD3P03R2G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 6 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 85MOhm |
| Additional Feature | AVALANCHE RATED |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -30V |
| Max Power Dissipation | 2W |
| Terminal Form | GULL WING |
| Current Rating | -3.05A |
| Base Part Number | NTMD3P03 |
| Pin Count | 8 |
| Number of Elements | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Turn On Delay Time | 16 ns |
| Power - Max | 730mW |
| FET Type | 2 P-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 85m Ω @ 3.05A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 750pF @ 24V |
| Current - Continuous Drain (Id) @ 25°C | 2.34A |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| Rise Time | 16ns |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time (Typ) | 45 ns |
| Turn-Off Delay Time | 45 ns |
| Continuous Drain Current (ID) | -3.05A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Nominal Vgs | -1.7 V |
| Feedback Cap-Max (Crss) | 135 pF |
| Height | 1.5mm |
| Length | 5mm |
| Width | 4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
NTMD3P03R2G Description
P-channel MOSFET is a type of MOSFET, in which the channel of MOSFET consists of most of the holes as current carriers. When the MOSFET is activated and turned on, most of the current flowing through the channel is a hole.
NTMD3P03R2G Features
? High Efficiency Components in a Dual SOIC?8 Package
? High Density Power MOSFET with Low RDS(on)
? Miniature SOIC?8 Surface Mount Package ? Saves Board Space
? Diode Exhibits High Speed with Soft Recovery
? IDSS Specified at Elevated Temperature
? Avalanche Energy Specified
? Mounting Information for the SOIC?8 Package is Provided
? AEC?Q101 Qualified ? NVMD3P03R2G
? These Devices are Pb?Free and are RoHS Compliant
NTMD3P03R2G Applications
? DC?DC Converters
? Low Voltage Motor Control
? Power Management in Portable and Battery?Powered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones
