NTMD2P01R2G

MOSFET 2P-CH 16V 2.3A 8SOIC


  • Manufacturer: ON Semiconductor
  • NO: 598-NTMD2P01R2G
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: pdf
  • Stock: 2164
  • Description: MOSFET 2P-CH 16V 2.3A 8SOIC(Kg)

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  • Delivery: Delivery
  • Payment: payment

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SPECIFICATIONS

Parameters
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 16V
Current - Continuous Drain (Id) @ 25°C 2.3A
Gate Charge (Qg) (Max) @ Vgs 18nC @ 4.5V
Rise Time 35ns
Drain to Source Voltage (Vdss) 16V
Fall Time (Typ) 29 ns
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) -3.85A
Gate to Source Voltage (Vgs) 10V
Drain-source On Resistance-Max 0.1Ohm
Drain to Source Breakdown Voltage -16V
Pulsed Drain Current-Max (IDM) 9A
Avalanche Energy Rating (Eas) 350 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
RoHS Status RoHS Compliant
Lead Free Lead Free
Lifecycle Status OBSOLETE (Last Updated: 1 week ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory Other Transistors
Voltage - Rated DC -16V
Max Power Dissipation 710mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -2.3A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 8
Qualification Status Not Qualified
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 2.4A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA

In Stock

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