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ContactNTMD2C02R2
MOSFET N/P-CH 20V 8SOIC
- Manufacturer: ON Semiconductor
- NO: 598-NTMD2C02R2
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 3524
- Description: MOSFET N/P-CH 20V 8SOIC(Kg)
- Delivery:
- Payment:
In Stock
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The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 43m Ω @ 4A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 5.2A 3.4A |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
| Rise Time | 40ns |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Fall Time (Typ) | 35 ns |
| Turn-Off Delay Time | 35 ns |
| Continuous Drain Current (ID) | 3.4A |
| Gate to Source Voltage (Vgs) | 12V |
| Drain-source On Resistance-Max | 0.043Ohm |
| Drain to Source Breakdown Voltage | 20V |
| Pulsed Drain Current-Max (IDM) | 48A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e0 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 20V |
| Max Power Dissipation | 2W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 240 |
| Reach Compliance Code | not_compliant |
| Current Rating | 2A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 8 |
| JESD-30 Code | R-PDSO-G8 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| FET Type | N and P-Channel |
