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ContactNTLUD3A260PZTBG
IGBT Transistors POWER MOSFET 20V 2A 200 M
- Manufacturer: ON Semiconductor
- NO: 598-NTLUD3A260PZTBG
- Package: 6-UFDFN Exposed Pad
- Datasheet:
- Stock: 187
- Description: IGBT Transistors POWER MOSFET 20V 2A 200 M(Kg)
- Delivery:
- Payment:
In Stock
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| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mounting Type | Surface Mount |
| Package / Case | 6-UFDFN Exposed Pad |
| Surface Mount | YES |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 500mW |
| Pin Count | 6 |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 800mW |
| Case Connection | DRAIN |
| Turn On Delay Time | 17.4 ns |
| FET Type | 2 P-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 200m Ω @ 2A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 4.2nC @ 4.5V |
| Rise Time | 32.3ns |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time (Typ) | 74 ns |
| Turn-Off Delay Time | 149 ns |
| Continuous Drain Current (ID) | 1.3A |
| Gate to Source Voltage (Vgs) | 8V |
| Drain Current-Max (Abs) (ID) | 1.7A |
| Drain-source On Resistance-Max | 0.2Ohm |
| DS Breakdown Voltage-Min | 20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
