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ContactNTLTD7900ZR2G
MOSFET 2N-CH 20V 6A 8MICRO
- Manufacturer: ON Semiconductor
- NO: 598-NTLTD7900ZR2G
- Package: 8-VDFN Exposed Pad
- Datasheet:
- Stock: 2513
- Description: MOSFET 2N-CH 20V 6A 8MICRO(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 week ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-VDFN Exposed Pad |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | ESD PROTECTED |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 20V |
| Max Power Dissipation | 1.5W |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 9A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | NTLTD7900Z |
| Pin Count | 8 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Configuration | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.5W |
| Case Connection | DRAIN |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 26m Ω @ 6.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 15pF @ 16V |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V |
| Rise Time | 1.17ns |
| Fall Time (Typ) | 1.17 ns |
| Turn-Off Delay Time | 1.87 ns |
| Continuous Drain Current (ID) | 6A |
| Gate to Source Voltage (Vgs) | 12V |
| Drain Current-Max (Abs) (ID) | 6A |
| Drain-source On Resistance-Max | 0.026Ohm |
| Drain to Source Breakdown Voltage | 20V |
| Pulsed Drain Current-Max (IDM) | 30A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
